? 2017 ixys corporation, all rights reserved high voltage xpt tm igbt IXYX50N170C v ces = 1700v i c110 = 50a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 3.7v t fi(typ) = 95ns symbol test conditions maximum ratings v ces t j = 25c to 175c 1700 v v cgr t j = 25c to 175c, r ge = 1m ? 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 178 a i c110 t c = 110c 50 a i cm t c = 25c, 1ms 460 a ssoa v ge = 15v, t vj = 150c, r g = 1 ? i cm = 200 a (rbsoa) clamped inductive load v ce ? 1360 v p c t c = 25c 1500 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c f c mounting force 20..120 /4.5..27 n/lb weight 6 g ds100800(02/17) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 1700 v v ge(th) i c = 250 ? a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 150 ? c 3.5 ma i ges v ce = 0v, v ge = ? 20v ??????????????? 100 na v ce(sat) i c = 50a, v ge = 15v, note 1 2.8 3.7 v t j = 150 ? c 3.9 v advance technical information features ? high voltage package ? high blocking voltage ? high peak current capability ? low saturation voltage advantages ? low gate drive requirement ? high power density applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? laser generators ? capacitor discharge circuits ? ac switches g = gate e = emitter c = collector tab = collector plus247 (ixyx) g tab e c g
ixys reserves the right to change limits, test conditions, and dimensions. IXYX50N170C ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 50a, v ce = 10v, note 1 30 50 s r gi gate input resistance 2.0 ? c ie s 5500 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 276 pf c res 105 pf q g(on) 260 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 28 nc q gc 110 nc t d(on) 20 ns t ri 44 ns e on 8.7 mj t d(off) 180 ns t fi 95 ns e of f 5.6 mj t d(on) 22 ns t ri 40 ns e on 11.9 mj t d(off) 236 ns t fi 160 ns e off 8.2 mj r thjc 0.10 c/w r thcs 0.15 c/w inductive load, t j = 25c i c = 50a, v ge = 15v v ce = 0.5 ? v ces , r g = 1 ? note 2 inductive load, t j = 150c i c = 50a, v ge = 15v v ce = 0.5 ? v ces , r g = 1 ? note 2 terminals: 1 - gate 2,4 - collector 3 - emitter plus247 tm outline
? 2017 ixys corporation, all rights reserved IXYX50N170C fig. 1. output characteristics @ t j = 25 o c 0 10 20 30 40 50 60 70 80 90 100 00.511.522.533.5 44.55 v ce - volts i c - amperes v ge = 15v 12v 10v 9v 8v 6v 7v fig. 2. extended output characteristics @ t j = 25 o c 0 100 200 300 400 500 600 0246810121416182022 v ce - volts i c - amperes v ge = 15v 11v 7v 6v 9v 14v 10v 12v 13v 8v fig. 3. output characteristics @ t j = 150 o c 0 10 20 30 40 50 60 70 80 90 100 01234567 v ce - volts i c - amperes v ge = 15v 12v 10v 9v 8v 5v 7v 6v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 50a i c = 25a i c = 100a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 100a 50a 25a t j = 150 o c fig. 6. input admittance 0 25 50 75 100 125 150 175 200 225 250 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 v ge - volts i c - amperes t j = 150 o c 25 o c - 40 o c
ixys reserves the right to change limits, test conditions, and dimensions. IXYX50N170C fig. 11. maximum transient thermal impedance 0.0001 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - k / w fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 0 40 80 120 160 200 240 280 i c - amperes g f s - siemens t j = - 40 o c 150 o c 25 o c fig. 10. reverse-bias safe operating area 0 40 80 120 160 200 240 200 400 600 800 1000 1200 1400 1600 v ce - volts i c - amperes t j = 150 o c r g = 1 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 240 280 q g - nanocoulombs v ge - volts v ce = 850v i c = 50a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res
? 2017 ixys corporation, all rights reserved IXYX50N170C fig. 12. inductive switching energy loss vs. gate resistance 0 5 10 15 20 25 30 35 12345678910 r g - ohms e off - millijoules 5 10 15 20 25 30 35 40 e on - millijoules e off e on t j = 150 o c , v ge = 15v v ce = 850v i c = 100a i c = 50a fig. 15. inductive turn-off switching times v s. gate resistance 120 140 160 180 200 220 12345678910 r g - ohms t f i - nanoseconds 100 200 300 400 500 600 t d(off) - nanoseconds t f i t d(off) t j = 150 o c, v ge = 15v v ce = 850v i c = 100a i c = 50a fig. 13. inductive switching energy loss vs. collector current 0 4 8 12 16 20 24 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoules 0 5 10 15 20 25 30 e on - millijoules e off e on r g = 1 ? ????? v ge = 15v v ce = 850v t j = 25 o c t j = 150 o c fig. 14. inductive switching energy loss vs. junction temperature 0 3 6 9 12 15 18 21 24 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 4 8 12 16 20 24 28 32 36 e on - millijoules e off e on r g = 1 ? ???? v ge = 15v v ce = 850v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. collector current 0 50 100 150 200 250 300 350 20 30 40 50 60 70 80 90 100 i c - amperes t f i - nanoseconds 50 100 150 200 250 300 350 400 t d(off) - nanoseconds t f i t d(off) r g = 1 ? ? , v ge = 15v v ce = 850v t j = 25 o c t j = 150 o c fig. 17. inductive turn-off switching times vs. junction temperature 60 80 100 120 140 160 180 200 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 140 160 180 200 220 240 260 280 t d(off) - nanoseconds t f i t d(off) r g = 1 ? ? , v ge = 15v v ce = 850v i c = 100a i c = 50a i c = 100a
ixys reserves the right to change limits, test conditions, and dimensions. IXYX50N170C ixys ref: ixy_50n170c (9t-at653) 2-10-17 fig. 20. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 160 20 30 40 50 60 70 80 90 100 i c - amperes t r i - nanoseconds 14 16 18 20 22 24 26 28 30 t d(on) - nanoseconds t r i t d(on) r g = 1 ? ? , v ge = 15v v ce = 850v t j = 150 o c t j = 25 o c fig. 21. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 180 200 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 14 16 18 20 22 24 26 28 30 32 34 t d(on) - nanoseconds t r i t d(on) r g = 1 ? ? , v ge = 15v v ce = 850v i c = 50a i c = 100a fig. 19. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 12345678910 r g - ohms t r i - nanoseconds 0 10 20 30 40 50 60 t d(on) - nanoseconds t r i t d(on) t j = 150 o c, v ge = 15v v ce = 850v i c = 100a i c = 50a
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